{"id":152094,"date":"2025-11-25T13:15:10","date_gmt":"2025-11-25T13:15:10","guid":{"rendered":"https:\/\/www.newsbeep.com\/il\/152094\/"},"modified":"2025-11-25T13:15:10","modified_gmt":"2025-11-25T13:15:10","slug":"scientists-set-new-mobility-record-in-quantum-compatible-semiconductor","status":"publish","type":"post","link":"https:\/\/www.newsbeep.com\/il\/152094\/","title":{"rendered":"Scientists Set New Mobility Record in Quantum-Compatible Semiconductor"},"content":{"rendered":"

Insider Brief<\/p>\n

Scientists at the University of Warwick and the National Research Council of Canada have demonstrated the highest hole mobility ever recorded in a silicon-compatible material.<\/p>\n

The team achieved this by engineering a nanometre-thin, compressively strained germanium layer on silicon that enables electrical charge to move with unprecedented efficiency.<\/p>\n

The material\u2019s performance points to faster, lower-power chips with applications in quantum information processing, AI hardware, and advanced semiconductor devices.<\/p>\n

Artistic Sketch of the fastest charge carrier ever on a silicon wafer. (Maksym Myronov \/ University of Warwick)<\/p>\n

PRESS RELEASE \u2014 Scientists at the University of Warwick and the National Research Council of Canada have achieved and measured the highest \u201chole mobility\u201d ever recorded in a silicon-compatible material.<\/p>\n

Most modern semiconductors are fabricated of or on Silicon (Si), but as devices get smaller and denser, they dissipate more power and as a result, are reaching their physical limits. Germanium (Ge)\u2014 once used in the first transistors of the 1950s \u2014 is now making a comeback as researchers find new ways to harness its superior properties while keeping the benefits of silicon\u2019s established manufacturing technologies.<\/p>\n

In a new study,\u00a0published in\u00a0Materials Today<\/a>, a team led by Warwick\u2019s Dr Maksym Myronov achieved a major step towards the next generation of electronics \u2014 creating a material using a nanometre-thin, compressively strained germanium epilayer on silicon, that allows electrical charge to move faster than ever before in a material compatible with modern chipmaking.<\/p>\n

\"Responsive<\/a><\/p>\n

Maksym Myronov,\u00a0Associate Professor and leader of the Semiconductors Research Group, Department of Physics, University of Warwick says\u00a0\u201cTraditional high-mobility semiconductors such as gallium arsenide (GaAs) are very expensive and impossible to integrate with mainstream silicon manufacturing. Our new compressively strained germanium-on-silicon (cs-GoS) quantum material combines world-leading mobility with industrial scalability \u2014 a key step toward practical quantum and classical large-scale integrated circuits.\u201d<\/p>\n

The breakthrough was achieved by carefully engineering a thin germanium layer on top of a silicon wafer.\u00a0By applying just the right amount of strain to the germanium layer, they created an ultra-clean crystal structure that allows electrical charge to flow almost without resistance.<\/p>\n

When evaluated, the material demonstrated a record hole mobility of 7.15 million cm\u00b2 per volt-second (compared to *** in industrial silicon), meaning charge can move through it far more easily than in silicon. This could enable future chips to run faster and dissipate less energy.<\/p>\n

Dr Sergei Studenikin, Principal Research Officer, National Research Council of Canada adds:\u00a0\u201cThis sets a new benchmark for charge transport in group-IV semiconductors \u2013 the materials at the heart of the global electronics industry. It opens the door to faster, more energy-efficient electronics and quantum devices that are fully compatible with existing silicon technology.\u201d<\/p>\n

The research establishes a new pathway for ultra-fast, low-power electronics, with potential applications spanning quantum information processing, spin qubits, cryogenic controllers for quantum processors, AI, and data-centre hardware with reduced energy and cooling demands.<\/p>\n

This advance also marks a major milestone for\u00a0Warwick\u2019s Semiconductors Research Group<\/a>, reinforcing the UK\u2019s leadership in semiconductor materials science.<\/p>\n","protected":false},"excerpt":{"rendered":"Insider Brief Scientists at the University of Warwick and the National Research Council of Canada have demonstrated the…\n","protected":false},"author":2,"featured_media":152095,"comment_status":"","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[6],"tags":[85,46,92573,92574,125,33573],"class_list":["post-152094","post","type-post","status-publish","format-standard","has-post-thumbnail","category-technology","tag-il","tag-israel","tag-national-research-council-of-canada","tag-silicon-compatible","tag-technology","tag-university-of-warwick"],"_links":{"self":[{"href":"https:\/\/www.newsbeep.com\/il\/wp-json\/wp\/v2\/posts\/152094","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.newsbeep.com\/il\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.newsbeep.com\/il\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.newsbeep.com\/il\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.newsbeep.com\/il\/wp-json\/wp\/v2\/comments?post=152094"}],"version-history":[{"count":0,"href":"https:\/\/www.newsbeep.com\/il\/wp-json\/wp\/v2\/posts\/152094\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.newsbeep.com\/il\/wp-json\/wp\/v2\/media\/152095"}],"wp:attachment":[{"href":"https:\/\/www.newsbeep.com\/il\/wp-json\/wp\/v2\/media?parent=152094"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.newsbeep.com\/il\/wp-json\/wp\/v2\/categories?post=152094"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.newsbeep.com\/il\/wp-json\/wp\/v2\/tags?post=152094"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}