Memristor Based On Vertically Aligned Nanocomposite With Highly Defective Vertical Channels (Purdue, UT Arlington)

A new technical paper titled “An Ultra-Robust Memristor Based on Vertically Aligned Nanocomposite with Highly Defective Vertical Channels for Neuromorphic Computing” was published by researchers at Purdue University and University of Texas at Arlington.

“In this work, a memristor based on SrTiO3-CeO2 (S-C) VAN thin films with highly defective vertical interfaces has been successfully demonstrated and comprehensively evaluated for both memory and neuromorphic computing applications,” states the paper.

Find the technical paper here. September 2025.

Z. Hu, H. Dou, J. B. Gan, et al. “ An Ultra-Robust Memristor Based on Vertically Aligned Nanocomposite with Highly Defective Vertical Channels for Neuromorphic Computing.” Adv. Funct. Mater. (2025): e12719. https://doi.org/10.1002/adfm.202512719