{"id":158654,"date":"2025-11-28T21:31:07","date_gmt":"2025-11-28T21:31:07","guid":{"rendered":"https:\/\/www.newsbeep.com\/nz\/158654\/"},"modified":"2025-11-28T21:31:07","modified_gmt":"2025-11-28T21:31:07","slug":"single-crystalline-monolayer-semiconductors-with-coherent-quantum-transport-by-vicinal-van-der-waals-epitaxy","status":"publish","type":"post","link":"https:\/\/www.newsbeep.com\/nz\/158654\/","title":{"rendered":"Single-crystalline monolayer semiconductors with coherent quantum transport by vicinal van der Waals epitaxy"},"content":{"rendered":"<p class=\"c-article-references__text\" id=\"ref-CR1\">Cui, X. et al. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. Nat. Nanotechnol. 10, 534\u2013540 (2015).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1038\/nnano.2015.70\" data-track-item_id=\"10.1038\/nnano.2015.70\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1038%2Fnnano.2015.70\" aria-label=\"Article reference 1\" data-doi=\"10.1038\/nnano.2015.70\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 1\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Multi-terminal%20transport%20measurements%20of%20MoS2%20using%20a%20van%20der%20Waals%20heterostructure%20device%20platform&amp;journal=Nat.%20Nanotechnol.&amp;doi=10.1038%2Fnnano.2015.70&amp;volume=10&amp;pages=534-540&amp;publication_year=2015&amp;author=Cui%2CX\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR2\">Fallahazad, B. et al. Shubnikov\u2013de Haas oscillations of high-mobility holes in monolayer and bilayer WSe2: Landau level degeneracy effective mass and negative compressibility. Phys. Rev. Lett. 116, 086601 (2016).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1103\/PhysRevLett.116.086601\" data-track-item_id=\"10.1103\/PhysRevLett.116.086601\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1103%2FPhysRevLett.116.086601\" aria-label=\"Article reference 2\" data-doi=\"10.1103\/PhysRevLett.116.086601\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 2\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Shubnikov%E2%80%93de%20Haas%20oscillations%20of%20high-mobility%20holes%20in%20monolayer%20and%20bilayer%20WSe2%3A%20Landau%20level%20degeneracy%20effective%20mass%20and%20negative%20compressibility&amp;journal=Phys.%20Rev.%20Lett.&amp;doi=10.1103%2FPhysRevLett.116.086601&amp;volume=116&amp;publication_year=2016&amp;author=Fallahazad%2CB\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR3\">Pisoni, R. et al. Interactions and magnetotransport through spin-valley coupled Landau levels in monolayer MoS2. Phys. Rev. Lett. 121, 247701 (2018).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1103\/PhysRevLett.121.247701\" data-track-item_id=\"10.1103\/PhysRevLett.121.247701\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1103%2FPhysRevLett.121.247701\" aria-label=\"Article reference 3\" data-doi=\"10.1103\/PhysRevLett.121.247701\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 3\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Interactions%20and%20magnetotransport%20through%20spin-valley%20coupled%20Landau%20levels%20in%20monolayer%20MoS2&amp;journal=Phys.%20Rev.%20Lett.&amp;doi=10.1103%2FPhysRevLett.121.247701&amp;volume=121&amp;publication_year=2018&amp;author=Pisoni%2CR\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR4\">Rhodes, D., Chae, S. H., Ribeiro-Palau, R. &amp; Hone, J. Disorder in van der Waals heterostructures of 2D materials. Nat. Mater. 18, 541\u2013549 (2019).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1038\/s41563-019-0366-8\" data-track-item_id=\"10.1038\/s41563-019-0366-8\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1038%2Fs41563-019-0366-8\" aria-label=\"Article reference 4\" data-doi=\"10.1038\/s41563-019-0366-8\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 4\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Disorder%20in%20van%20der%20Waals%20heterostructures%20of%202D%20materials&amp;journal=Nat.%20Mater.&amp;doi=10.1038%2Fs41563-019-0366-8&amp;volume=18&amp;pages=541-549&amp;publication_year=2019&amp;author=Rhodes%2CD&amp;author=Chae%2CSH&amp;author=Ribeiro-Palau%2CR&amp;author=Hone%2CJ\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR5\">Chen, L. et al. Step-edge-guided nucleation and growth of aligned WSe2 on sapphire via a layer-over-layer growth mode. ACS Nano 9, 8368\u20138375 (2015).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1021\/acsnano.5b03043\" data-track-item_id=\"10.1021\/acsnano.5b03043\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1021%2Facsnano.5b03043\" aria-label=\"Article reference 5\" data-doi=\"10.1021\/acsnano.5b03043\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 5\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Step-edge-guided%20nucleation%20and%20growth%20of%20aligned%20WSe2%20on%20sapphire%20via%20a%20layer-over-layer%20growth%20mode&amp;journal=ACS%20Nano&amp;doi=10.1021%2Facsnano.5b03043&amp;volume=9&amp;pages=8368-8375&amp;publication_year=2015&amp;author=Chen%2CL\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR6\">Li, T. et al. Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire. Nat. Nanotechnol. 16, 1201\u20131207 (2021).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1038\/s41565-021-00963-8\" data-track-item_id=\"10.1038\/s41565-021-00963-8\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1038%2Fs41565-021-00963-8\" aria-label=\"Article reference 6\" data-doi=\"10.1038\/s41565-021-00963-8\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 6\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Epitaxial%20growth%20of%20wafer-scale%20molybdenum%20disulfide%20semiconductor%20single%20crystals%20on%20sapphire&amp;journal=Nat.%20Nanotechnol.&amp;doi=10.1038%2Fs41565-021-00963-8&amp;volume=16&amp;pages=1201-1207&amp;publication_year=2021&amp;author=Li%2CT\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR7\">Wang, J. et al. Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire. Nat. Nanotechnol. 17, 33\u201338 (2022).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1038\/s41565-021-01004-0\" data-track-item_id=\"10.1038\/s41565-021-01004-0\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1038%2Fs41565-021-01004-0\" aria-label=\"Article reference 7\" data-doi=\"10.1038\/s41565-021-01004-0\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 7\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Dual-coupling-guided%20epitaxial%20growth%20of%20wafer-scale%20single-crystal%20WS2%20monolayer%20on%20vicinal%20a-plane%20sapphire&amp;journal=Nat.%20Nanotechnol.&amp;doi=10.1038%2Fs41565-021-01004-0&amp;volume=17&amp;pages=33-38&amp;publication_year=2022&amp;author=Wang%2CJ\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR8\">Fu, J.-H. et al. Oriented lateral growth of two-dimensional materials on c-plane sapphire. Nat. Nanotechnol. 18, 1289\u20131294 (2023).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1038\/s41565-023-01445-9\" data-track-item_id=\"10.1038\/s41565-023-01445-9\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1038%2Fs41565-023-01445-9\" aria-label=\"Article reference 8\" data-doi=\"10.1038\/s41565-023-01445-9\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 8\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Oriented%20lateral%20growth%20of%20two-dimensional%20materials%20on%20c-plane%20sapphire&amp;journal=Nat.%20Nanotechnol.&amp;doi=10.1038%2Fs41565-023-01445-9&amp;volume=18&amp;pages=1289-1294&amp;publication_year=2023&amp;author=Fu%2CJ-H\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR9\">Zhu, H. et al. Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire. Nat. Nanotechnol. 18, 1295\u20131302 (2023).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1038\/s41565-023-01456-6\" data-track-item_id=\"10.1038\/s41565-023-01456-6\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1038%2Fs41565-023-01456-6\" aria-label=\"Article reference 9\" data-doi=\"10.1038\/s41565-023-01456-6\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 9\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Step%20engineering%20for%20nucleation%20and%20domain%20orientation%20control%20in%20WSe2%20epitaxy%20on%20c-plane%20sapphire&amp;journal=Nat.%20Nanotechnol.&amp;doi=10.1038%2Fs41565-023-01456-6&amp;volume=18&amp;pages=1295-1302&amp;publication_year=2023&amp;author=Zhu%2CH\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR10\">Zheng, P. et al. Universal epitaxy of non-centrosymmetric two-dimensional single-crystal metal dichalcogenides. Nat. Commun. 14, 592 (2023).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1038\/s41467-023-36286-6\" data-track-item_id=\"10.1038\/s41467-023-36286-6\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1038%2Fs41467-023-36286-6\" aria-label=\"Article reference 10\" data-doi=\"10.1038\/s41467-023-36286-6\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 10\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Universal%20epitaxy%20of%20non-centrosymmetric%20two-dimensional%20single-crystal%20metal%20dichalcogenides&amp;journal=Nat.%20Commun.&amp;doi=10.1038%2Fs41467-023-36286-6&amp;volume=14&amp;publication_year=2023&amp;author=Zheng%2CP\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR11\">Li, L. et al. Epitaxy of wafer-scale single-crystal MoS2 monolayer via buffer layer control. Nat. Commun. 15, 1825 (2024).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1038\/s41467-024-46170-6\" data-track-item_id=\"10.1038\/s41467-024-46170-6\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1038%2Fs41467-024-46170-6\" aria-label=\"Article reference 11\" data-doi=\"10.1038\/s41467-024-46170-6\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 11\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Epitaxy%20of%20wafer-scale%20single-crystal%20MoS2%20monolayer%20via%20buffer%20layer%20control&amp;journal=Nat.%20Commun.&amp;doi=10.1038%2Fs41467-024-46170-6&amp;volume=15&amp;publication_year=2024&amp;author=Li%2CL\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR12\">Liu, C. et al. Understanding epitaxial growth of two-dimensional materials and their homostructures. Nat. Nanotechnol. 19, 907\u2013918 (2024).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1038\/s41565-024-01704-3\" data-track-item_id=\"10.1038\/s41565-024-01704-3\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1038%2Fs41565-024-01704-3\" aria-label=\"Article reference 12\" data-doi=\"10.1038\/s41565-024-01704-3\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 12\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Understanding%20epitaxial%20growth%20of%20two-dimensional%20materials%20and%20their%20homostructures&amp;journal=Nat.%20Nanotechnol.&amp;doi=10.1038%2Fs41565-024-01704-3&amp;volume=19&amp;pages=907-918&amp;publication_year=2024&amp;author=Liu%2CC\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR13\">Hickey, D. R. et al. Illuminating invisible grain boundaries in coalesced single-orientation WS2 monolayer films. Nano Lett. 21, 6487\u20136495 (2021).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1021\/acs.nanolett.1c01517\" data-track-item_id=\"10.1021\/acs.nanolett.1c01517\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1021%2Facs.nanolett.1c01517\" aria-label=\"Article reference 13\" data-doi=\"10.1021\/acs.nanolett.1c01517\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 13\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Illuminating%20invisible%20grain%20boundaries%20in%20coalesced%20single-orientation%20WS2%20monolayer%20films&amp;journal=Nano%20Lett.&amp;doi=10.1021%2Facs.nanolett.1c01517&amp;volume=21&amp;pages=6487-6495&amp;publication_year=2021&amp;author=Hickey%2CDR\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR14\">Chubarov, M. et al. Wafer-scale epitaxial growth of unidirectional WS2 monolayers on sapphire. ACS Nano 15, 2532\u20132541 (2021).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1021\/acsnano.0c06750\" data-track-item_id=\"10.1021\/acsnano.0c06750\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1021%2Facsnano.0c06750\" aria-label=\"Article reference 14\" data-doi=\"10.1021\/acsnano.0c06750\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 14\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Wafer-scale%20epitaxial%20growth%20of%20unidirectional%20WS2%20monolayers%20on%20sapphire&amp;journal=ACS%20Nano&amp;doi=10.1021%2Facsnano.0c06750&amp;volume=15&amp;pages=2532-2541&amp;publication_year=2021&amp;author=Chubarov%2CM\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR15\">Seo, S.-Y. et al. Reconfigurable photo-induced doping of two-dimensional van der Waals semiconductors using different photon energies. Nat. Electron. 4, 38\u201344 (2021).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1038\/s41928-020-00512-6\" data-track-item_id=\"10.1038\/s41928-020-00512-6\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1038%2Fs41928-020-00512-6\" aria-label=\"Article reference 15\" data-doi=\"10.1038\/s41928-020-00512-6\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 15\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Reconfigurable%20photo-induced%20doping%20of%20two-dimensional%20van%20der%20Waals%20semiconductors%20using%20different%20photon%20energies&amp;journal=Nat.%20Electron.&amp;doi=10.1038%2Fs41928-020-00512-6&amp;volume=4&amp;pages=38-44&amp;publication_year=2021&amp;author=Seo%2CS-Y\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR16\">Seo, S.-Y. et al. Writing monolithic integrated circuits on a two-dimensional semiconductor with a scanning light probe. Nat. Electron. 1, 512\u2013517 (2018).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1038\/s41928-018-0129-6\" data-track-item_id=\"10.1038\/s41928-018-0129-6\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1038%2Fs41928-018-0129-6\" aria-label=\"Article reference 16\" data-doi=\"10.1038\/s41928-018-0129-6\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 16\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Writing%20monolithic%20integrated%20circuits%20on%20a%20two-dimensional%20semiconductor%20with%20a%20scanning%20light%20probe&amp;journal=Nat.%20Electron.&amp;doi=10.1038%2Fs41928-018-0129-6&amp;volume=1&amp;pages=512-517&amp;publication_year=2018&amp;author=Seo%2CS-Y\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR17\">Seo, S.-Y. et al. Identification of point defects in atomically thin transition-metal dichalcogenide semiconductors as active dopants. Nano Lett. 21, 3341\u20133354 (2021).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1021\/acs.nanolett.0c05135\" data-track-item_id=\"10.1021\/acs.nanolett.0c05135\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1021%2Facs.nanolett.0c05135\" aria-label=\"Article reference 17\" data-doi=\"10.1021\/acs.nanolett.0c05135\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 17\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Identification%20of%20point%20defects%20in%20atomically%20thin%20transition-metal%20dichalcogenide%20semiconductors%20as%20active%20dopants&amp;journal=Nano%20Lett.&amp;doi=10.1021%2Facs.nanolett.0c05135&amp;volume=21&amp;pages=3341-3354&amp;publication_year=2021&amp;author=Seo%2CS-Y\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR18\">Ahn, H. et al. Integrated 1D epitaxial mirror twin boundaries for ultrascaled 2D MoS2 field-effect transistors. Nat. Nanotech. 19, 955\u2013961 (2024).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1038\/s41565-024-01706-1\" data-track-item_id=\"10.1038\/s41565-024-01706-1\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1038%2Fs41565-024-01706-1\" aria-label=\"Article reference 18\" data-doi=\"10.1038\/s41565-024-01706-1\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 18\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Integrated%201D%20epitaxial%20mirror%20twin%20boundaries%20for%20ultrascaled%202D%20MoS2%20field-effect%20transistors&amp;journal=Nat.%20Nanotech.&amp;doi=10.1038%2Fs41565-024-01706-1&amp;volume=19&amp;pages=955-961&amp;publication_year=2024&amp;author=Ahn%2CH\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR19\">Deng, B. et al. Epitaxially defined Luttinger liquids on MoS2 bicrystals. Phys. Rev. Lett. 134, 046301 (2025).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1103\/PhysRevLett.134.046301\" data-track-item_id=\"10.1103\/PhysRevLett.134.046301\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1103%2FPhysRevLett.134.046301\" aria-label=\"Article reference 19\" data-doi=\"10.1103\/PhysRevLett.134.046301\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 19\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Epitaxially%20defined%20Luttinger%20liquids%20on%20MoS2%20bicrystals&amp;journal=Phys.%20Rev.%20Lett.&amp;doi=10.1103%2FPhysRevLett.134.046301&amp;volume=134&amp;publication_year=2025&amp;author=Deng%2CB\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR20\">Jin, G. et al. Atomically thin three-dimensional membranes of van der Waals semiconductors by wafer-scale growth. Sci. Adv. 5, eaaw3180 (2019).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1126\/sciadv.aaw3180\" data-track-item_id=\"10.1126\/sciadv.aaw3180\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1126%2Fsciadv.aaw3180\" aria-label=\"Article reference 20\" data-doi=\"10.1126\/sciadv.aaw3180\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 20\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Atomically%20thin%20three-dimensional%20membranes%20of%20van%20der%20Waals%20semiconductors%20by%20wafer-scale%20growth&amp;journal=Sci.%20Adv.&amp;doi=10.1126%2Fsciadv.aaw3180&amp;volume=5&amp;publication_year=2019&amp;author=Jin%2CG\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR21\">Heo, H. et al. Frank\u2013van der Merwe growth versus Volmer\u2013Weber growth in successive stacking of a few\u2010layer Bi2Te3\/Sb2Te3 by van der Waals heteroepitaxy: the critical roles of finite lattice\u2010mismatch with seed substrates. Adv. Electron. Mater. 3, <a href=\"https:\/\/doi.org\/10.1002\/aelm.201600375\" data-track=\"click_references\" data-track-action=\"external reference\" data-track-value=\"external reference\" data-track-label=\"10.1002\/aelm.201600375\" rel=\"nofollow noopener\" target=\"_blank\">https:\/\/doi.org\/10.1002\/aelm.201600375<\/a> (2017).<\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR22\">Jin, G. et al. Heteroepitaxial van der Waals semiconductor superlattices. Nat. Nanotechnol. 16, 1092\u20131098 (2021).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1038\/s41565-021-00942-z\" data-track-item_id=\"10.1038\/s41565-021-00942-z\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1038%2Fs41565-021-00942-z\" aria-label=\"Article reference 22\" data-doi=\"10.1038\/s41565-021-00942-z\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 22\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Heteroepitaxial%20van%20der%20Waals%20semiconductor%20superlattices&amp;journal=Nat.%20Nanotechnol.&amp;doi=10.1038%2Fs41565-021-00942-z&amp;volume=16&amp;pages=1092-1098&amp;publication_year=2021&amp;author=Jin%2CG\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR23\">Kyuno, K. &amp; Ehrlich, G. Step-edge barriers on Pt(111): an atomistic view. Phys. Rev. Lett. 81, 5592\u20135595 (1998).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1103\/PhysRevLett.81.5592\" data-track-item_id=\"10.1103\/PhysRevLett.81.5592\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1103%2FPhysRevLett.81.5592\" aria-label=\"Article reference 23\" data-doi=\"10.1103\/PhysRevLett.81.5592\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 23\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Step-edge%20barriers%20on%20Pt%28111%29%3A%20an%20atomistic%20view&amp;journal=Phys.%20Rev.%20Lett.&amp;doi=10.1103%2FPhysRevLett.81.5592&amp;volume=81&amp;pages=5592-5595&amp;publication_year=1998&amp;author=Kyuno%2CK&amp;author=Ehrlich%2CG\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR24\">Choi, M.-Y. et al. Thermodynamically driven tilt grain boundaries of monolayer crystals using catalytic liquid alloys. Nano Lett. 23, 4516\u20134523 (2023).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1021\/acs.nanolett.3c00935\" data-track-item_id=\"10.1021\/acs.nanolett.3c00935\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1021%2Facs.nanolett.3c00935\" aria-label=\"Article reference 24\" data-doi=\"10.1021\/acs.nanolett.3c00935\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 24\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Thermodynamically%20driven%20tilt%20grain%20boundaries%20of%20monolayer%20crystals%20using%20catalytic%20liquid%20alloys&amp;journal=Nano%20Lett.&amp;doi=10.1021%2Facs.nanolett.3c00935&amp;volume=23&amp;pages=4516-4523&amp;publication_year=2023&amp;author=Choi%2CM-Y\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR25\">Brewer, L. &amp; Lamoreaux, R. H. The Mo-S system (Molybdenum-Sulfur). Bull. Alloy Phase Diagr. 1, 93\u201395 (1980).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"noopener nofollow\" data-track-label=\"10.1007\/BF02881201\" data-track-item_id=\"10.1007\/BF02881201\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/link.springer.com\/doi\/10.1007\/BF02881201\" aria-label=\"Article reference 25\" data-doi=\"10.1007\/BF02881201\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 25\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=The%20Mo-S%20system%20%28Molybdenum-Sulfur%29&amp;journal=Bull.%20Alloy%20Phase%20Diagr.&amp;doi=10.1007%2FBF02881201&amp;volume=1&amp;pages=93-95&amp;publication_year=1980&amp;author=Brewer%2CL&amp;author=Lamoreaux%2CRH\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR26\">Hoang, A. T. et al. Low-temperature growth of MoS2 on polymer and thin glass substrates for flexible electronics. Nat. Nanotechnol. 18, 1439\u20131447 (2023).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1038\/s41565-023-01460-w\" data-track-item_id=\"10.1038\/s41565-023-01460-w\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1038%2Fs41565-023-01460-w\" aria-label=\"Article reference 26\" data-doi=\"10.1038\/s41565-023-01460-w\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 26\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Low-temperature%20growth%20of%20MoS2%20on%20polymer%20and%20thin%20glass%20substrates%20for%20flexible%20electronics&amp;journal=Nat.%20Nanotechnol.&amp;doi=10.1038%2Fs41565-023-01460-w&amp;volume=18&amp;pages=1439-1447&amp;publication_year=2023&amp;author=Hoang%2CAT\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR27\">Fu, D. et al. Molecular beam epitaxy of highly crystalline monolayer molybdenum disulfide on hexagonal boron nitride. J. Am. Chem. Soc. 139, 9392\u20139400 (2017).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1021\/jacs.7b05131\" data-track-item_id=\"10.1021\/jacs.7b05131\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1021%2Fjacs.7b05131\" aria-label=\"Article reference 27\" data-doi=\"10.1021\/jacs.7b05131\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 27\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Molecular%20beam%20epitaxy%20of%20highly%20crystalline%20monolayer%20molybdenum%20disulfide%20on%20hexagonal%20boron%20nitride&amp;journal=J.%20Am.%20Chem.%20Soc.&amp;doi=10.1021%2Fjacs.7b05131&amp;volume=139&amp;pages=9392-9400&amp;publication_year=2017&amp;author=Fu%2CD\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR28\">Zhang, Z. &amp; Lagally, M. G. Atomistic processes in the early stages of thin-film growth. Science 276, 377\u2013383 (1997).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1126\/science.276.5311.377\" data-track-item_id=\"10.1126\/science.276.5311.377\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1126%2Fscience.276.5311.377\" aria-label=\"Article reference 28\" data-doi=\"10.1126\/science.276.5311.377\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 28\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Atomistic%20processes%20in%20the%20early%20stages%20of%20thin-film%20growth&amp;journal=Science&amp;doi=10.1126%2Fscience.276.5311.377&amp;volume=276&amp;pages=377-383&amp;publication_year=1997&amp;author=Zhang%2CZ&amp;author=Lagally%2CMG\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR29\">Kim, K. S. et al. Non-epitaxial single-crystal 2D material growth by geometric confinement. Nature 614, 88\u201394 (2023).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1038\/s41586-022-05524-0\" data-track-item_id=\"10.1038\/s41586-022-05524-0\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1038%2Fs41586-022-05524-0\" aria-label=\"Article reference 29\" data-doi=\"10.1038\/s41586-022-05524-0\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 29\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Non-epitaxial%20single-crystal%202D%20material%20growth%20by%20geometric%20confinement&amp;journal=Nature&amp;doi=10.1038%2Fs41586-022-05524-0&amp;volume=614&amp;pages=88-94&amp;publication_year=2023&amp;author=Kim%2CKS\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR30\">Jin, W. et al. Direct measurement of the thickness-dependent electronic band structure of MoS2 using angle-resolved photoemission spectroscopy. Phys. Rev. Lett. 111, 106801 (2013).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1103\/PhysRevLett.111.106801\" data-track-item_id=\"10.1103\/PhysRevLett.111.106801\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1103%2FPhysRevLett.111.106801\" aria-label=\"Article reference 30\" data-doi=\"10.1103\/PhysRevLett.111.106801\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 30\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Direct%20measurement%20of%20the%20thickness-dependent%20electronic%20band%20structure%20of%20MoS2%20using%20angle-resolved%20photoemission%20spectroscopy&amp;journal=Phys.%20Rev.%20Lett.&amp;doi=10.1103%2FPhysRevLett.111.106801&amp;volume=111&amp;publication_year=2013&amp;author=Jin%2CW\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR31\">Lim, Y.-F. et al. Modification of vapor phase concentrations in MoS2 growth using a NiO foam barrier ACS nano. ACS Nano 12, 1339\u20131349 (2018).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1021\/acsnano.7b07682\" data-track-item_id=\"10.1021\/acsnano.7b07682\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1021%2Facsnano.7b07682\" aria-label=\"Article reference 31\" data-doi=\"10.1021\/acsnano.7b07682\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 31\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Modification%20of%20vapor%20phase%20concentrations%20in%20MoS2%20growth%20using%20a%20NiO%20foam%20barrier%20ACS%20nano&amp;journal=ACS%20Nano&amp;doi=10.1021%2Facsnano.7b07682&amp;volume=12&amp;pages=1339-1349&amp;publication_year=2018&amp;author=Lim%2CY-F\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR32\">Zhu, Z. Y., Cheng, Y. C. &amp; Schwingenschl\u00f6gl, U. Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors. Phys. Rev. B 84, 153402 (2011).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1103\/PhysRevB.84.153402\" data-track-item_id=\"10.1103\/PhysRevB.84.153402\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1103%2FPhysRevB.84.153402\" aria-label=\"Article reference 32\" data-doi=\"10.1103\/PhysRevB.84.153402\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 32\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Giant%20spin-orbit-induced%20spin%20splitting%20in%20two-dimensional%20transition-metal%20dichalcogenide%20semiconductors&amp;journal=Phys.%20Rev.%20B&amp;doi=10.1103%2FPhysRevB.84.153402&amp;volume=84&amp;publication_year=2011&amp;author=Zhu%2CZY&amp;author=Cheng%2CYC&amp;author=Schwingenschl%C3%B6gl%2CU\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR33\">Jain, A. et al. One-dimensional edge contacts to a monolayer semiconductor. Nano Lett. 19, 6914\u20136923 (2019).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1021\/acs.nanolett.9b02166\" data-track-item_id=\"10.1021\/acs.nanolett.9b02166\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1021%2Facs.nanolett.9b02166\" aria-label=\"Article reference 33\" data-doi=\"10.1021\/acs.nanolett.9b02166\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 33\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=One-dimensional%20edge%20contacts%20to%20a%20monolayer%20semiconductor&amp;journal=Nano%20Lett.&amp;doi=10.1021%2Facs.nanolett.9b02166&amp;volume=19&amp;pages=6914-6923&amp;publication_year=2019&amp;author=Jain%2CA\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR34\">Ma, N. &amp; Jena, D. Charge scattering and mobility in atomically thin semiconductors. Phys. Rev. X 4, 011043 (2014).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 34\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Charge%20scattering%20and%20mobility%20in%20atomically%20thin%20semiconductors&amp;journal=Phys.%20Rev.%20X&amp;volume=4&amp;publication_year=2014&amp;author=Ma%2CN&amp;author=Jena%2CD\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR35\">Datta, S. Electronic Transport in Mesoscopic Systems (Cambridge Univ. Press, Cambridge, 1995).<\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR36\">Kaasbjerg, K., Thygesen, K. S. &amp; Jacobsen, K. W. Phonon-limited mobility in n -type single-layer MoS2 from first principles. Phys. Rev. B 85, 115317 (2012).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1103\/PhysRevB.85.115317\" data-track-item_id=\"10.1103\/PhysRevB.85.115317\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1103%2FPhysRevB.85.115317\" aria-label=\"Article reference 36\" data-doi=\"10.1103\/PhysRevB.85.115317\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 36\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Phonon-limited%20mobility%20in%20n%20-type%20single-layer%20MoS2%20from%20first%20principles&amp;journal=Phys.%20Rev.%20B&amp;doi=10.1103%2FPhysRevB.85.115317&amp;volume=85&amp;publication_year=2012&amp;author=Kaasbjerg%2CK&amp;author=Thygesen%2CKS&amp;author=Jacobsen%2CKW\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR37\">Stern, F. &amp; Howard, W. E. Properties of semiconductor surface inversion layers in the electric quantum limit physical review. Phys. Rev. 163, 816\u2013835 (1967).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1103\/PhysRev.163.816\" data-track-item_id=\"10.1103\/PhysRev.163.816\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1103%2FPhysRev.163.816\" aria-label=\"Article reference 37\" data-doi=\"10.1103\/PhysRev.163.816\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 37\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Properties%20of%20semiconductor%20surface%20inversion%20layers%20in%20the%20electric%20quantum%20limit%20physical%20review&amp;journal=Phys.%20Rev.&amp;doi=10.1103%2FPhysRev.163.816&amp;volume=163&amp;pages=816-835&amp;publication_year=1967&amp;author=Stern%2CF&amp;author=Howard%2CWE\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR38\">Ando, T., Fowler, A. B. &amp; Stern, F. Electronic properties of two-dimensional systems. Rev. Mod. Phys. 54, 437\u2013672 (1982).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1103\/RevModPhys.54.437\" data-track-item_id=\"10.1103\/RevModPhys.54.437\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1103%2FRevModPhys.54.437\" aria-label=\"Article reference 38\" data-doi=\"10.1103\/RevModPhys.54.437\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 38\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Electronic%20properties%20of%20two-dimensional%20systems&amp;journal=Rev.%20Mod.%20Phys.&amp;doi=10.1103%2FRevModPhys.54.437&amp;volume=54&amp;pages=437-672&amp;publication_year=1982&amp;author=Ando%2CT&amp;author=Fowler%2CAB&amp;author=Stern%2CF\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR39\">Sarma, S. D., Adam, S., Hwang, E. H. &amp; Rossi, E. Electronic transport in two-dimensional graphene. Rev. Mod. Phys. 83, 407\u2013470 (2011).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1103\/RevModPhys.83.407\" data-track-item_id=\"10.1103\/RevModPhys.83.407\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1103%2FRevModPhys.83.407\" aria-label=\"Article reference 39\" data-doi=\"10.1103\/RevModPhys.83.407\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 39\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Electronic%20transport%20in%20two-dimensional%20graphene&amp;journal=Rev.%20Mod.%20Phys.&amp;doi=10.1103%2FRevModPhys.83.407&amp;volume=83&amp;pages=407-470&amp;publication_year=2011&amp;author=Sarma%2CSD&amp;author=Adam%2CS&amp;author=Hwang%2CEH&amp;author=Rossi%2CE\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR40\">Schmidt, S. et al. Transport properties of monolayer MoS2 grown by chemical vapor deposition. Nano Lett. 14, 1909\u20131913 (2014).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1021\/nl4046922\" data-track-item_id=\"10.1021\/nl4046922\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1021%2Fnl4046922\" aria-label=\"Article reference 40\" data-doi=\"10.1021\/nl4046922\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 40\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Transport%20properties%20of%20monolayer%20MoS2%20grown%20by%20chemical%20vapor%20deposition&amp;journal=Nano%20Lett.&amp;doi=10.1021%2Fnl4046922&amp;volume=14&amp;pages=1909-1913&amp;publication_year=2014&amp;author=Schmidt%2CS\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR41\">Hikami, S., Larkin, A. I. &amp; Nagaoka, Y. Spin-orbit interaction and magnetoresistance in the two dimensional random system. Prog. Theor. Phys. 63, 707\u2013710 (1980).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1143\/PTP.63.707\" data-track-item_id=\"10.1143\/PTP.63.707\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1143%2FPTP.63.707\" aria-label=\"Article reference 41\" data-doi=\"10.1143\/PTP.63.707\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 41\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Spin-orbit%20interaction%20and%20magnetoresistance%20in%20the%20two%20dimensional%20random%20system&amp;journal=Prog.%20Theor.%20Phys.&amp;doi=10.1143%2FPTP.63.707&amp;volume=63&amp;pages=707-710&amp;publication_year=1980&amp;author=Hikami%2CS&amp;author=Larkin%2CAI&amp;author=Nagaoka%2CY\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR42\">Schmidt, H. et al. Quantum transport and observation of Dyakonov\u2013Perel spin-orbit scattering in monolayer MoS2. Phy. Rev. Lett. 116, 046803 (2016).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1103\/PhysRevLett.116.046803\" data-track-item_id=\"10.1103\/PhysRevLett.116.046803\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1103%2FPhysRevLett.116.046803\" aria-label=\"Article reference 42\" data-doi=\"10.1103\/PhysRevLett.116.046803\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 42\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Quantum%20transport%20and%20observation%20of%20Dyakonov%E2%80%93Perel%20spin-orbit%20scattering%20in%20monolayer%20MoS2&amp;journal=Phy.%20Rev.%20Lett.&amp;doi=10.1103%2FPhysRevLett.116.046803&amp;volume=116&amp;publication_year=2016&amp;author=Schmidt%2CH\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR43\">Papadopoulos, N., Watanabe, K., Taniguchi, T., van der Zant, H. S. J. &amp; Steele, G. A. Weak localization in boron nitride encapsulated bilayer MoS2. Phys. Rev. B 99, 115414 (2019).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1103\/PhysRevB.99.115414\" data-track-item_id=\"10.1103\/PhysRevB.99.115414\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1103%2FPhysRevB.99.115414\" aria-label=\"Article reference 43\" data-doi=\"10.1103\/PhysRevB.99.115414\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 43\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Weak%20localization%20in%20boron%20nitride%20encapsulated%20bilayer%20MoS2&amp;journal=Phys.%20Rev.%20B&amp;doi=10.1103%2FPhysRevB.99.115414&amp;volume=99&amp;publication_year=2019&amp;author=Papadopoulos%2CN&amp;author=Watanabe%2CK&amp;author=Taniguchi%2CT&amp;author=Zant%2CHSJ&amp;author=Steele%2CGA\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR44\">Qu, T. et al. Observation of weak localization in dual-gated bilayer MoS2. Phys. Rev. Res. 6, 013216 (2024).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1103\/PhysRevResearch.6.013216\" data-track-item_id=\"10.1103\/PhysRevResearch.6.013216\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1103%2FPhysRevResearch.6.013216\" aria-label=\"Article reference 44\" data-doi=\"10.1103\/PhysRevResearch.6.013216\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 44\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Observation%20of%20weak%20localization%20in%20dual-gated%20bilayer%20MoS2&amp;journal=Phys.%20Rev.%20Res.&amp;doi=10.1103%2FPhysRevResearch.6.013216&amp;volume=6&amp;publication_year=2024&amp;author=Qu%2CT\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR45\">Shen, P.-C. et al. Ultralow contact resistance between semimetal and monolayer semiconductors. Nature 593, 211\u2013217 (2021).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1038\/s41586-021-03472-9\" data-track-item_id=\"10.1038\/s41586-021-03472-9\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1038%2Fs41586-021-03472-9\" aria-label=\"Article reference 45\" data-doi=\"10.1038\/s41586-021-03472-9\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 45\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Ultralow%20contact%20resistance%20between%20semimetal%20and%20monolayer%20semiconductors&amp;journal=Nature&amp;doi=10.1038%2Fs41586-021-03472-9&amp;volume=593&amp;pages=211-217&amp;publication_year=2021&amp;author=Shen%2CP-C\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR46\">Amani, M. et al. Near-unity photoluminescence quantum yield in MoS2. Science 350, 1065\u20131068 (2015).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1126\/science.aad2114\" data-track-item_id=\"10.1126\/science.aad2114\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1126%2Fscience.aad2114\" aria-label=\"Article reference 46\" data-doi=\"10.1126\/science.aad2114\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 46\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Near-unity%20photoluminescence%20quantum%20yield%20in%20MoS2&amp;journal=Science&amp;doi=10.1126%2Fscience.aad2114&amp;volume=350&amp;pages=1065-1068&amp;publication_year=2015&amp;author=Amani%2CM\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR47\">Park, J. H. et al. Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface. Sci. Adv. 3, e1701661 (2017).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1126\/sciadv.1701661\" data-track-item_id=\"10.1126\/sciadv.1701661\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1126%2Fsciadv.1701661\" aria-label=\"Article reference 47\" data-doi=\"10.1126\/sciadv.1701661\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 47\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Defect%20passivation%20of%20transition%20metal%20dichalcogenides%20via%20a%20charge%20transfer%20van%20der%20Waals%20interface&amp;journal=Sci.%20Adv.&amp;doi=10.1126%2Fsciadv.1701661&amp;volume=3&amp;publication_year=2017&amp;author=Park%2CJH\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR48\">Zhao, Y. et al. Electrical spectroscopy of defect states and their hybridization in monolayer MoS2. Nat. Commun. 14, 44 (2023).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1038\/s41467-022-35651-1\" data-track-item_id=\"10.1038\/s41467-022-35651-1\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1038%2Fs41467-022-35651-1\" aria-label=\"Article reference 48\" data-doi=\"10.1038\/s41467-022-35651-1\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 48\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Electrical%20spectroscopy%20of%20defect%20states%20and%20their%20hybridization%20in%20monolayer%20MoS2&amp;journal=Nat.%20Commun.&amp;doi=10.1038%2Fs41467-022-35651-1&amp;volume=14&amp;publication_year=2023&amp;author=Zhao%2CY\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n<p class=\"c-article-references__text\" id=\"ref-CR49\">Wang, Y., Sarkar, S., Yan, H. &amp; Chhowalla, M. Critical challenges in the development of electronics based on two-dimensional transition metal dichalcogenides. Nat. Electron. 7, 638\u2013645 (2024).<\/p>\n<p class=\"c-article-references__links u-hide-print\"><a data-track=\"click_references\" rel=\"nofollow noopener\" data-track-label=\"10.1038\/s41928-024-01210-3\" data-track-item_id=\"10.1038\/s41928-024-01210-3\" data-track-value=\"article reference\" data-track-action=\"article reference\" href=\"https:\/\/doi.org\/10.1038%2Fs41928-024-01210-3\" aria-label=\"Article reference 49\" data-doi=\"10.1038\/s41928-024-01210-3\" target=\"_blank\">Article<\/a>\u00a0<br \/>\n    <a data-track=\"click_references\" data-track-action=\"google scholar reference\" data-track-value=\"google scholar reference\" data-track-label=\"link\" data-track-item_id=\"link\" rel=\"nofollow noopener\" aria-label=\"Google Scholar reference 49\" href=\"http:\/\/scholar.google.com\/scholar_lookup?&amp;title=Critical%20challenges%20in%20the%20development%20of%20electronics%20based%20on%20two-dimensional%20transition%20metal%20dichalcogenides&amp;journal=Nat.%20Electron.&amp;doi=10.1038%2Fs41928-024-01210-3&amp;volume=7&amp;pages=638-645&amp;publication_year=2024&amp;author=Wang%2CY&amp;author=Sarkar%2CS&amp;author=Yan%2CH&amp;author=Chhowalla%2CM\" target=\"_blank\"><br \/>\n                    Google Scholar<\/a>\u00a0\n                <\/p>\n","protected":false},"excerpt":{"rendered":"Cui, X. et al. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. Nat.&hellip;\n","protected":false},"author":2,"featured_media":158655,"comment_status":"","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[24],"tags":[20817,10729,27935,5927,111,139,69,393,147,37474,5931],"class_list":{"0":"post-158654","1":"post","2":"type-post","3":"status-publish","4":"format-standard","5":"has-post-thumbnail","7":"category-physics","8":"tag-electrical-and-electronic-engineering","9":"tag-electrical-engineering","10":"tag-electronic-devices","11":"tag-electronic-properties-and-materials","12":"tag-new-zealand","13":"tag-newzealand","14":"tag-nz","15":"tag-physics","16":"tag-science","17":"tag-synthesis-and-processing","18":"tag-two-dimensional-materials"},"_links":{"self":[{"href":"https:\/\/www.newsbeep.com\/nz\/wp-json\/wp\/v2\/posts\/158654","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.newsbeep.com\/nz\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.newsbeep.com\/nz\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.newsbeep.com\/nz\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.newsbeep.com\/nz\/wp-json\/wp\/v2\/comments?post=158654"}],"version-history":[{"count":0,"href":"https:\/\/www.newsbeep.com\/nz\/wp-json\/wp\/v2\/posts\/158654\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.newsbeep.com\/nz\/wp-json\/wp\/v2\/media\/158655"}],"wp:attachment":[{"href":"https:\/\/www.newsbeep.com\/nz\/wp-json\/wp\/v2\/media?parent=158654"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.newsbeep.com\/nz\/wp-json\/wp\/v2\/categories?post=158654"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.newsbeep.com\/nz\/wp-json\/wp\/v2\/tags?post=158654"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}