Backes, C. et al. Production and processing of graphene and related materials. 2D Mater. 7, 022001 (2020).
Chung, Y.-Y. et al. First demonstration of GAA monolayer-MoS2 nanosheet nFET with 410μA μm ID 1V VD at 40nm gate length. In Proc. IEEE International Electron Devices Meeting 34.5.1–34.5.4 (IEEE, 2022); https://doi.org/10.1109/IEDM45625.2022.10019563
O’Brien, K. P. et al. Process integration and future outlook of 2D transistors. Nat. Commun. 14, 6400 (2023).
Smets, Q. et al. Sources of variability in scaled MoS2 FETs. In Proc. IEEE International Electron Devices Meeting 3.1.1–3.1.4 (IEEE, 2020); https://doi.org/10.1109/IEDM13553.2020.9371890
International Roadmap for Devices and Systems: 2022 Update—More Moore (IEEE, 2022); https://irds.ieee.org/editions
Semiconductor Research Corporation. The Decadal Plan for Semiconductors (Semiconductor Research Corporation, 2024); https://www.src.org/about/decadal-plan/
Robertson, J. & Wallace, R. M. High-K materials and metal gates for CMOS applications. Mater. Sci. Eng R Rep. 88, 1–41 (2015).
Zhu, K. et al. Hybrid 2D–CMOS microchips for memristive applications. Nature 618, 57–62 (2023).
Britnell, A. et al. Electron tunneling through ultrathin boron nitride crystalline barriers. Nano Lett. 12, 1707–1710 (2012).
Wu, X. et al. Thinnest nonvolatile memory based on monolayer h-BN. Adv. Mater. 31, 1806790 (2019).
Kim, M. et al. Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems. Nat. Electron. 3, 479–485 (2020).
Ge, J. et al. A sub-500 mV monolayer hexagonal boron nitride based memory device. Mater. Des. 198, 109366 (2021).
Ge, R. et al. A library of atomically thin 2D materials featuring the conductive-point resistive switching phenomenon. Adv. Mater. 33, 2007792 (2021).
Wu, X., Ge, R., Kim, M., Akinwande, D. & Lee, J. C. Atomristors: non-volatile resistance switching in 2D monolayers. In Proc. Pan Pacific Symposium (Surface Mount Technology Association, 2020); https://doi.org/10.37665/ppHOFWA56362
Li, Y., Cui, Z., He, Y., Tian, H. & Tian, T. Resistive switching properties of monolayer h-BN atomristors with different electrodes. Appl. Phys. Lett. 120, 173504 (2022).
Yang, S. J. et al. Reconfigurable low-voltage hexagonal boron nitride nonvolatile switches for millimeter-wave wireless communications. Nano Lett. 23, 1152–1158 (2023).
Yang, S. J. et al. Volatile and nonvolatile resistive switching coexistence in conductive point hexagonal boron nitride monolayer. ACS Nano 18, 3313–3322 (2024).
Yang, S. J. et al. Giant memory window performance and low power consumption of hexagonal boron nitride monolayer atomristor. npj 2D Mater. Appl. 9, 9 (2025).
Yuan, Y. et al. On-chip atomristors. Mater. Sci. Eng R Rep. 165, 101006 (2025).
Ge, R. et al. Atomristor: nonvolatile resistance switching in atomic sheets of transition metal dichalcogenides. Nano Lett. 18, 434–441 (2018).
Kim, M. et al. Zero-static power radio-frequency switches based on MoS2 atomristors. Nat. Commun. 9, 2524 (2018).
Wu, X., Ge, R., Akinwande, D. & Lee, J. C. Understanding of multiple resistance states by current-sweep measurement and compliance current modulation in 2D MoS2-based non-volatile resistance switching devices. In Proc. Device Research Conference 1–2 (IEEE, 2020); https://doi.org/10.1088/1361-6528/aba46a
Ge, R. et al. Atomristors: memory effect in atomically-thin sheets and record RF switches. In Proc. IEEE International Electron Devices Meeting 22.6.1–22.6.4 (IEEE, 2018); https://doi.org/10.1109/IEDM.2018.8614602
Lo, S. H. et al. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET’s. IEEE Electron Device Lett. 18, 209–211 (1997).
Kim, W.-B., Matsumoto, T. & Kobayashi, H. Ultrathin SiO2 layer with an extremely low leakage current density formed in high concentration nitric acid. J. Appl. Phys. 105, 103709 (2009).
Green, M. L. et al. Understanding the limits of ultrathin SiO2 and Si-O-N gate dielectrics for sub-50 nm CMOS. Microelectron. Eng 48, 25–30 (1999).
Cabanillas, A. et al. Enormous out-of-plane charge rectification and conductance through two-dimensional monolayers. ACS Nano 19, 3865–3877 (2025).
Chiu, F. C. A review on conduction mechanisms in dielectric films. Adv. Mater. Sci. Eng 2014, 578168 (2014).
Tsu, R. & Esaki, L. Tunneling in a finite superlattice. Appl. Phys. Lett. 22, 562–564 (1973).
Knobloch, T. et al. The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials. Nat. Electron. 4, 98–108 (2021).
Feenstra, R. M. et al. Magnitude of the current in 2D interlayer tunneling devices. J. Phys. Condens. Matter 30, 055703 (2018).
Ducry, F. et al. An ab initio study on resistance switching in hexagonal boron nitride. npj 2D Mater. Appl. 6, 58 (2022).
Weber, J. et al. Current-limited conductive atomic force microscopy. ACS Appl. Mater. Interfaces 15, 56365–56374 (2023).
Wang, B. et al. Experimental observation and mitigation of dielectric screening in hexagonal boron nitride based resistive switching devices. Cryst. Res. Technol. 53, 1800006 (2018).
Xiao, Y. et al. Highly accurate thickness determination of 2D materials. Cryst. Res. Technol. 56, 2100056 (2021).
Zheng, W. et al. The origin and mitigation of defects induced by metal evaporation in 2D materials. Mater. Sci. Eng R Rep. 160, 100831 (2024).
Yuan, Y. et al. On the quality of commercial chemical vapour deposited hexagonal boron nitride. Nat. Commun. 15, 4518 (2024).
Yuan, Y. & Lanza, M. The effect of relative humidity in conductive atomic force microscopy. Adv. Mater. 36, 2405932 (2024).
Simmons, J. G. Generalized formula for the electric tunnel effect between similar electrodes separated by a thin insulating film. J. Appl. Phys. 34, 1793–1803 (1963).
Matthews, N., Hagmann, M. J. & Mayer, A. Comment: ‘generalized formula for the electric tunnel effect between similar electrodes separated by a thin insulating film’ [J. Appl. Phys. 34, 1793 (1963)]. J. Appl. Phys. 123, 136101 (2018).
Ottone, C. et al. The effects of the film thickness and roughness in the anodization process of very thin aluminum films. J. Mater. Sci. Nanotechnol. 1, S107 (2014).
Nutsch, A. & Pfitzner, L. Chemical mechanical planarization (CMP) metrology for 45/32 nm technology generations. AIP Conf. Proc. 931, 173–177 (AIP, 2007).
Zhang, L. et al. Polishing mechanisms of various surfactants in chemical mechanical polishing relevant to cobalt interconnects. Int. J. Adv. Manuf. Technol. 128, 5425–5436 (2023).
Babich, I. et al. Polymer-free van der Waals assembly of 2D material heterostructures using muscovite crystals. Nat. Commun. https://doi.org/10.1038/s41467-026-72554-x (2026).
Ginestra™ Simulation Platform. Applied Materials https://www.appliedmaterials.com/sg/en/semiconductor/ginestra-software.html (2025).
Wickramaratne, D., Weston, L. & Van de Walle, C. G. Monolayer to bulk properties of hexagonal boron nitride. J. Phys. Chem. C 122, 25524–25529 (2018).
Smidstrup, S. et al. QuantumATK: an integrated platform of electronic and atomic-scale modelling tools. J. Phys. Condens. Matter 32, 015901 (2020).
Kresse, G. & Furthmüller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 6, 15–50 (1996).