Cui, X. et al. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. Nat. Nanotechnol. 10, 534–540 (2015).
Fallahazad, B. et al. Shubnikov–de Haas oscillations of high-mobility holes in monolayer and bilayer WSe2: Landau level degeneracy effective mass and negative compressibility. Phys. Rev. Lett. 116, 086601 (2016).
Pisoni, R. et al. Interactions and magnetotransport through spin-valley coupled Landau levels in monolayer MoS2. Phys. Rev. Lett. 121, 247701 (2018).
Rhodes, D., Chae, S. H., Ribeiro-Palau, R. & Hone, J. Disorder in van der Waals heterostructures of 2D materials. Nat. Mater. 18, 541–549 (2019).
Chen, L. et al. Step-edge-guided nucleation and growth of aligned WSe2 on sapphire via a layer-over-layer growth mode. ACS Nano 9, 8368–8375 (2015).
Li, T. et al. Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire. Nat. Nanotechnol. 16, 1201–1207 (2021).
Wang, J. et al. Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire. Nat. Nanotechnol. 17, 33–38 (2022).
Fu, J.-H. et al. Oriented lateral growth of two-dimensional materials on c-plane sapphire. Nat. Nanotechnol. 18, 1289–1294 (2023).
Zhu, H. et al. Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire. Nat. Nanotechnol. 18, 1295–1302 (2023).
Zheng, P. et al. Universal epitaxy of non-centrosymmetric two-dimensional single-crystal metal dichalcogenides. Nat. Commun. 14, 592 (2023).
Li, L. et al. Epitaxy of wafer-scale single-crystal MoS2 monolayer via buffer layer control. Nat. Commun. 15, 1825 (2024).
Liu, C. et al. Understanding epitaxial growth of two-dimensional materials and their homostructures. Nat. Nanotechnol. 19, 907–918 (2024).
Hickey, D. R. et al. Illuminating invisible grain boundaries in coalesced single-orientation WS2 monolayer films. Nano Lett. 21, 6487–6495 (2021).
Chubarov, M. et al. Wafer-scale epitaxial growth of unidirectional WS2 monolayers on sapphire. ACS Nano 15, 2532–2541 (2021).
Seo, S.-Y. et al. Reconfigurable photo-induced doping of two-dimensional van der Waals semiconductors using different photon energies. Nat. Electron. 4, 38–44 (2021).
Seo, S.-Y. et al. Writing monolithic integrated circuits on a two-dimensional semiconductor with a scanning light probe. Nat. Electron. 1, 512–517 (2018).
Seo, S.-Y. et al. Identification of point defects in atomically thin transition-metal dichalcogenide semiconductors as active dopants. Nano Lett. 21, 3341–3354 (2021).
Ahn, H. et al. Integrated 1D epitaxial mirror twin boundaries for ultrascaled 2D MoS2 field-effect transistors. Nat. Nanotech. 19, 955–961 (2024).
Deng, B. et al. Epitaxially defined Luttinger liquids on MoS2 bicrystals. Phys. Rev. Lett. 134, 046301 (2025).
Jin, G. et al. Atomically thin three-dimensional membranes of van der Waals semiconductors by wafer-scale growth. Sci. Adv. 5, eaaw3180 (2019).
Heo, H. et al. Frank–van der Merwe growth versus Volmer–Weber growth in successive stacking of a few‐layer Bi2Te3/Sb2Te3 by van der Waals heteroepitaxy: the critical roles of finite lattice‐mismatch with seed substrates. Adv. Electron. Mater. 3, https://doi.org/10.1002/aelm.201600375 (2017).
Jin, G. et al. Heteroepitaxial van der Waals semiconductor superlattices. Nat. Nanotechnol. 16, 1092–1098 (2021).
Kyuno, K. & Ehrlich, G. Step-edge barriers on Pt(111): an atomistic view. Phys. Rev. Lett. 81, 5592–5595 (1998).
Choi, M.-Y. et al. Thermodynamically driven tilt grain boundaries of monolayer crystals using catalytic liquid alloys. Nano Lett. 23, 4516–4523 (2023).
Brewer, L. & Lamoreaux, R. H. The Mo-S system (Molybdenum-Sulfur). Bull. Alloy Phase Diagr. 1, 93–95 (1980).
Hoang, A. T. et al. Low-temperature growth of MoS2 on polymer and thin glass substrates for flexible electronics. Nat. Nanotechnol. 18, 1439–1447 (2023).
Fu, D. et al. Molecular beam epitaxy of highly crystalline monolayer molybdenum disulfide on hexagonal boron nitride. J. Am. Chem. Soc. 139, 9392–9400 (2017).
Zhang, Z. & Lagally, M. G. Atomistic processes in the early stages of thin-film growth. Science 276, 377–383 (1997).
Kim, K. S. et al. Non-epitaxial single-crystal 2D material growth by geometric confinement. Nature 614, 88–94 (2023).
Jin, W. et al. Direct measurement of the thickness-dependent electronic band structure of MoS2 using angle-resolved photoemission spectroscopy. Phys. Rev. Lett. 111, 106801 (2013).
Lim, Y.-F. et al. Modification of vapor phase concentrations in MoS2 growth using a NiO foam barrier ACS nano. ACS Nano 12, 1339–1349 (2018).
Zhu, Z. Y., Cheng, Y. C. & Schwingenschlögl, U. Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors. Phys. Rev. B 84, 153402 (2011).
Jain, A. et al. One-dimensional edge contacts to a monolayer semiconductor. Nano Lett. 19, 6914–6923 (2019).
Ma, N. & Jena, D. Charge scattering and mobility in atomically thin semiconductors. Phys. Rev. X 4, 011043 (2014).
Datta, S. Electronic Transport in Mesoscopic Systems (Cambridge Univ. Press, Cambridge, 1995).
Kaasbjerg, K., Thygesen, K. S. & Jacobsen, K. W. Phonon-limited mobility in n -type single-layer MoS2 from first principles. Phys. Rev. B 85, 115317 (2012).
Stern, F. & Howard, W. E. Properties of semiconductor surface inversion layers in the electric quantum limit physical review. Phys. Rev. 163, 816–835 (1967).
Ando, T., Fowler, A. B. & Stern, F. Electronic properties of two-dimensional systems. Rev. Mod. Phys. 54, 437–672 (1982).
Sarma, S. D., Adam, S., Hwang, E. H. & Rossi, E. Electronic transport in two-dimensional graphene. Rev. Mod. Phys. 83, 407–470 (2011).
Schmidt, S. et al. Transport properties of monolayer MoS2 grown by chemical vapor deposition. Nano Lett. 14, 1909–1913 (2014).
Hikami, S., Larkin, A. I. & Nagaoka, Y. Spin-orbit interaction and magnetoresistance in the two dimensional random system. Prog. Theor. Phys. 63, 707–710 (1980).
Schmidt, H. et al. Quantum transport and observation of Dyakonov–Perel spin-orbit scattering in monolayer MoS2. Phy. Rev. Lett. 116, 046803 (2016).
Papadopoulos, N., Watanabe, K., Taniguchi, T., van der Zant, H. S. J. & Steele, G. A. Weak localization in boron nitride encapsulated bilayer MoS2. Phys. Rev. B 99, 115414 (2019).
Qu, T. et al. Observation of weak localization in dual-gated bilayer MoS2. Phys. Rev. Res. 6, 013216 (2024).
Shen, P.-C. et al. Ultralow contact resistance between semimetal and monolayer semiconductors. Nature 593, 211–217 (2021).
Amani, M. et al. Near-unity photoluminescence quantum yield in MoS2. Science 350, 1065–1068 (2015).
Park, J. H. et al. Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface. Sci. Adv. 3, e1701661 (2017).
Zhao, Y. et al. Electrical spectroscopy of defect states and their hybridization in monolayer MoS2. Nat. Commun. 14, 44 (2023).
Wang, Y., Sarkar, S., Yan, H. & Chhowalla, M. Critical challenges in the development of electronics based on two-dimensional transition metal dichalcogenides. Nat. Electron. 7, 638–645 (2024).